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Si1033X
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 20
R DS(on) ( ? )
8 at V GS = - 4.5 V
12 at V GS = - 2.5 V
15 at V GS = - 1.8 V
20 at V GS = - 1.5 V
I D (mA)
- 150
- 125
- 100
- 30
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET: 1.5 V Rated
? High-Side Switching
? Low On-Resistance: 8 ?
? Low Threshold: 0.9 V (typ.)
? Fast Switching Speed: 45 ns (typ.)
? 1.5 V Operation
? Gate-Source ESD Protected: 2000 V
? Compliant to RoHS Directive 2002/95/EC
SC-89
BENEFITS
S1
1
6
D1
?
Ease in Driving Switches
?
Low Offset (Error) Voltage
G1
2
5
G2
Marking Code: K
?
Low-Voltage Operation
?
High-Speed Circuits
D2
3
4
S2
?
Low Battery Voltage Operation
Top View
Ordering Information: Si1033X-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
? Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
? Battery Operated Systems
? Power Supply Converter Circuits
? Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
Steady State
- 20
±5
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current b
T A = 25 °C
T A = 85 °C
I D
I DM
- 155
- 110
- 650
- 145
- 105
mA
Continuous Source Current (Diode Conduction) a
I S
- 450
- 380
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
T A = 25 °C
T A = 85 °C
P D
T J , T stg
ESD
280
145
- 55 to 150
2000
250
130
mW
°C
V
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71428
S10-2544-Rev. C, 08-Nov-10
www.vishay.com
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